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2SK1999 Silicon N-Channel MOS FET Application VHF amplifier Features * High gain, high efficiency PG = 15 dB, D = 65% typ (f = 200 MHz) * Compact package Suitable for push - pull circuit Outline 2SK1999 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25C Symbol VDSS VGSS ID Pch* Tch Tstg 1 Ratings 120 20 12 180 150 -55 to +150 Unit V V A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage* 1 Gate to source breakdown voltage* 1 Symbol Min V(BR)DSS V(BR)GSS 120 20 -- 0.5 -- 1.5 -- -- 150 -- Typ -- -- -- -- 2.7 1.8 185 60 180 65 Max -- -- 0.5 2.0 3.5 -- -- -- -- -- Unit V V mA V V S pF pF W % Test conditions I D = 1 mA, VGS = 0 I G = 100 A, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 3 A, VGS = 10 V*2 I D = 2.5 A, VDS = 10 V*2 VGS = 5 V, VDS = 0 f = 1 MHz VDS = 50 V, VGS = 0 f = 1 MHz VDS = 60 V, IDQ = 0.2 A f = 200 MHz, Pin = 5 W Zero gate voltage drain current* 1 I DSS Gate to source cutoff voltage* 1 1 VGS(off) VDS(on) |yfs| Ciss Coss Po D Drain to source cutoff voltage* Forward transfer admittance*1 Input capacitance*1 Output capacitance*1 Output Power Drain Efficiency Notes: 1. Shows / unit FET 2. Pulse Test 2 2SK1999 3 2SK1999 4 2SK1999 5 2SK1999 6 2SK1999 Package Dimensions Unit: mm 7 2SK1999 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 8 |
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